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BSG0810NDI power block features ? dual asymmetric n-channel optimos?5 mosfet ? logic level (4.5v rated) ? pb-free lead plating; rohs compliant ? optimized for high performance buck converter ? qualified according to jedec 1) for target applications ? halogen-free according to iec61249-2-21 ? monolithic integrated schottky like diode maximum ratings, at t j =25c, unless otherwise specified 2) parameter symbol conditions unit q1 q2 continuous drain current i d t c =70?c,? v gs =10 v 50 50 a t c =70?c,? v gs =4.5 v 50 50 t a =25?c,? v gs =4.5 v 3) 31 50 t a =25?c,? v gs =4.5 v 4) 19 39 pulsed drain current i d,pulse t c =70?c 160 160 avalanche energy, single pulse e as q1: i d =10?a, q2: i d =20?a, r gs =25? w 30 90 mj gate source voltage v gs t j =25?c v power dissipation p tot t a =25?c 3) 6.25 6.25 w t a =25 c 4) 2.5 2.5 operating and storage temperature t j , t stg c iec climatic category; din iec 68-1 value -55 ... 150 55/150/56 16 1) j-std20 and jesd22 type package marking BSG0810NDI pg - tison8 - 4 0810ndi q1 q2 v ds 25 25 v r ds(on),max v gs =10 v 3 0.9 m w v gs =4.5 v 4 1.2 i d 50 50 a product summary rev.2.0.1 page 1 2015-08-21 d 1 ( v i n ) s 1 ( v p h a s e ) d 1 ( v i n ) g 1 ( g h s ) s 1 / d 2 ( v p h a s e ) g 2 ( g l s ) s 1 / d 2 ( v p h a s e ) s 1 / d 2 ( v p h a s e ) s 2 ( g n d ) q 1 t o p v i e w ( 1 ) ( 2 ) ( 3 ) ( 4 ) ( 5 ) ( 6 ) ( 7 ) ( 8 ) ( 1 0 ) ( 9 ) q 2 p i n 1 s 1 ( v p h a s e ) ( 2 ) g 1 ( g h s ) ( 1 ) ( 7 ) s 1 / d 2 ( v p h a s e ) b o t t o m v i e w s 2 ( g n d ) p i n 1 0 ( 6 ) s 1 / d 2 ( v p h a s e ) ( 5 ) s 1 / d 2 ( v p h a s e ) d 1 ( v i n ) ( 4 ) d 1 ( v i n ) p i n 9 d 1 ( v i n ) ( 3 ) ( 8 ) g 2 ( g l s )
BSG0810NDI parameter symbol conditions unit min. typ. max. thermal characteristics q1 r thjc - - 4.3 k/w q2 - - 1.8 q1 r thja q2 q1 q2 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage q1 q2 q1 q2 gate threshold voltage q1 q2 zero gate voltage drain current q1 i dss - - 1 a q2 - - 500 q1 - - 100 q2 - 0.9 - ma gate-source leakage current q1 i gss q2 q1 r ds(on) - 3.2 4.0 m w q2 - 1.0 1.2 q1 - 2.4 3.0 q2 - 0.75 0.9 gate resistance q1 r g - 0.7 1.2 w q2 - 0.8 1.3 transconductance q1 g fs 47 94 - s q2 55 110 - v gs(th) v v ds = v gs , i d =250?a 20 50 - 1.6 25 6) v - mv/k d v (br)dss /d t j i d =10?ma, referenced to 25?c - thermal resistance, junction - case 6 cm 2 cooling area 4) v (br)dss v gs =0?v, i d =1?ma values 15 v ds =25?v, v gs =0?v, t j =25?c 2) remark: only one of both transistors active drain-source on-state resistance thermal resistance, junction - ambient 2) application specific board 3) 100 - - 2 1.2 - - - breakdown voltage temperature coefficient v gs =4.5?v, i d =20?a v gs =10?v, i d =20?a | v ds |>2| i d | r ds(on)max , i d =20?a v ds =20?v, v gs =0?v, t j =125?c na - v gs =16?v, v ds =0?v - rev.2.0.1 page 2 2015-08-21
BSG0810NDI parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance q1 c iss - 770 1040 pf q2 - 2300 3100 output capacitance q1 c oss - 390 520 q2 - 1400 1900 reverse transfer capacitance q1 c rss - 33 - q2 - 110 - turn-on delay time q1 t d(on) - 4.3 ns q2 - 5.1 - rise time q1 t r - 4.7 - q2 - 4.0 - turn-off delay time q1 t d(off) - 4.3 - q2 - 8 - fall time q1 t f - 1.4 - q2 - 2.4 - gate charge characteristics gate to source charge q1 q gs - 2.2 - nc gate to drain charge q gd - 1.6 - gate charge total q g - 5.6 8.4 gate plateau voltage v plateau - 2.9 - v gate to source charge q2 q gs - 5.9 - nc gate to drain charge q gd - 4.2 - gate charge total q g - 16 25 gate plateau voltage v plateau - 2.6 - v output charge q1 q oss - 8 - nc q2 - 26 - 3) 8 layers copper 70m thickness. pcb in still air 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values v gs =0?v, v ds = 12?v, f =1?mhz v in =12?v, v drv =5?v, f sw =500?khz, i out =30?a 5) v dd =12?v, i d =20?a, v gs =0?to 4.5?v v dd =12?v, v gs =0?v rev.2.0.1 page 3 2015-08-21
BSG0810NDI parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current q1 i s - - 29 a q2 50 diode pulse current q1 i s,pulse - - 160 q2 - - 160 diode forward voltage q1 v sd v gs =0?v, i f =20?a, t j =25?c - 0.85 1 v q2 v gs =0?v, i f =11?a, t j =25?c - 0.49 0.7 reverse recovery charge q1 q rr nc q2 5) for more information see application note n tbd 6) the device can withstand a pulse of not more than 30v for a duration of up to 2ns at a frequency of 600khz with maximum buck converter input voltage v in =16 v values t c =25?c v r =12 v, i f = i s , d i f /d t =100 a/s 10 - - rev.2.0.1 page 4 2015-08-21
BSG0810NDI 1 power dissipation (q1) 2 power dissipation (q2) p tot =f( t a ) 4) p tot =f( t a ) 4) 3 drain current (q1) 4 drain current (q2) i d =f( t c ) i d =f( t c ) parameter: v gs 10 v parameter: v gs 10 v 0 0.5 1 1.5 2 2.5 3 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 60 0 40 80 120 160 i d [a] t c [ c] 0 0.5 1 1.5 2 2.5 3 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 60 0 40 80 120 160 i d [a] t c [ c] rev.2.0.1 page 5 2015-08-21
BSG0810NDI 5 safe operating area (q1) 6 safe operating area (q2) i d =f( v ds ); t c =25 c; d =0 i d =f( v ds ); t c =25 c; d =0 parameter: t p parameter: t p 7 max. transient thermal impedance (q1) 8 max. transient thermal impedance (q2) z thjc =f( t p ) z thjc =f( t p ) parameter: d = t p / t parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 - 1 10 0 10 1 10 2 10 - 1 10 0 10 1 10 2 10 3 i d [a] v ds [v] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 - 2 10 - 1 10 0 10 1 z thjc [k/w] t p [s] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 - 1 10 0 10 1 z thjc [k/w] t p [s] 1 s 10 s 100 s 1 ms 10 ms dc 10 - 1 10 0 10 1 10 2 10 - 1 10 0 10 1 10 2 10 3 i d [a] v ds [v] rev.2.0.1 page 6 2015-08-21
BSG0810NDI 9 typ. output characteristics (q1) 10 typ. output characteristics (q2) i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: v gs parameter: v gs 11 typ. drain-source on resistance (q1) 12 typ. drain-source on resistance (q2) r ds(on) =f( i d ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 100 200 300 400 0 1 2 3 i d [a] v ds [v] 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 40 80 120 160 0 1 2 3 i d [a] v ds [v] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 0.5 1 1.5 2 0 20 40 60 80 r ds(on) [m w ] i d [a] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 2 4 6 8 10 0 20 40 60 80 r ds(on) [m w ] i d [a] rev.2.0.1 page 7 2015-08-21
BSG0810NDI 13 typ. transfer characteristics (q1) 14 typ. transfer characteristics (q2) i d =f( v gs ); | v ds |>2 | i d | r ds(on)max i d =f( v gs ); |v ds |>2 | i d | r ds(on)max parameter: t j parameter: t j 15 drain-source on-state resistance (q1) 16 drain-source on-state resistance (q2) r ds(on) =f( t j ); i d =20 a; v gs =10 v r ds(on) =f( t j ); i d =20 a; v gs =10 v 25 c 150 c 0 100 200 300 400 0 1 2 3 4 i d [a] v gs [v] 25 c 150 c 0 40 80 120 160 0 1 2 3 4 i d [a] v gs [v] typ 0 1 2 3 4 5 6 7 -60 -20 20 60 100 140 180 r ds(on) [m w ] t j [ c] typ 0 0.5 1 1.5 2 -60 -20 20 60 100 140 180 r ds(on) [m w ] t j [ c] rev.2.0.1 page 8 2015-08-21
BSG0810NDI 17 typ. gate threshold voltage (q1) 18 typ. gate threshold voltage (q2) v gs(th) =f( t j ); v gs = v ds ; i d =250 a v gs(th) =f( t j ); v gs = v ds ; i d =10 ma 19 typ. capacitances (q1) 20 typ. capacitances (q2) c =f( v ds ); v gs =0 v; f =1 mhz c =f( v ds ); v gs =0 v; f =1 mhz ciss coss crss 10 0 10 1 10 2 10 3 10 4 0 5 10 15 20 25 c [pf] v ds [v] ciss coss crss 10 1 10 2 10 3 10 4 0 5 10 15 20 25 c [pf] v ds [v] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] rev.2.0.1 page 9 2015-08-21
BSG0810NDI 21 forward characteristics of reverse diode (q1) 22 forward characteristics of reverse diode (q2) i f =f( v sd ) i f =f( v sd ) parameter: t j parameter: t j 23 avalanche characteristics (q1) 24 avalanche characteristics (q2) i as =f( t av ); r gs =25 w i as =f( t av ); r gs =25 w parameter: t j(start) parameter: t j(start) 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 150 c 10 - 2 10 - 1 10 0 10 1 10 2 10 3 0 0.4 0.8 1.2 i f [a] v sd [v] - 55 c 25 c 150 c 100 c 10 - 2 10 - 1 10 0 10 1 10 2 10 3 0 0.4 0.8 1.2 i f [a] v sd [v] rev.2.0.1 page 10 2015-08-21
BSG0810NDI 25 typ. gate charge (q1) 26 typ. gate charge (q2) v gs =f( q gate ); i d =20 a pulsed v gs =f( q gate ); i d =20 a pulsed parameter: v dd parameter: v dd 27 drain-source breakdown voltage (q1) 28 typ. drain-source leakage current (q2) v br(dss) =f( t j ); i d =1 ma i dss =f( v ds ); v gs =0 v parameter: t j 20 21 22 23 24 25 26 27 28 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 5 v 12 v 20 v 0 2 4 6 8 10 0 2 4 6 8 10 12 14 v gs [v] q gate [nc] 5 v 12 v 20 v 0 2 4 6 8 10 0 10 20 30 40 v gs [v] q gate [nc] 25 c 75 c 100 c 125 c 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 0 5 10 15 20 i dss [a] v ds [v] rev.2.0.1 page 11 2015-08-21
BSG0810NDI package outline pg-tison8-4 rev.2.0.1 page 12 2015-08-21
BSG0810NDI boardpads & apertures pg-tison8-4 all the dimensions in mm rev.2.0.1 page 13 2015-08-21
BSG0810NDI published by infineon technologies ag 81726 munich, germany ? 2015 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev.2.0.1 page 14 2015-08-21

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